AO4900

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4900usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronou

AO4900

丝印：4900；Package：SOP-8；Dual N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=6.9A(VGS=10V) ●RDS(ON)

AO4900

MOSFET：Dual-Channel;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO4900A

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

GeneralDescription TheAO4900AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDCDCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchrono

AO4900AL

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

GeneralDescription TheAO4900AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDCDCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchrono

AO4900L

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4900usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronou

AO4900A

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode;