丝印：4850；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 75V ● ID = 3.1A (VGS = 10V) ● RDS(ON)

文件：1.0909 Mbytes 页数：4 Pages

KEXIN

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Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V ID = 3.1A (VG

文件：117.49 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4850；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 75V ● ID = 3.1A (VGS = 10V) ● RDS(ON)

文件：1.48091 Mbytes 页数：4 Pages

KEXIN

科信电子

60V Dual N-Channel MOSFET

General Description The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. Product Summary VDS (V) = 60V ID = 3.5A (VGS = 10V) RDS(ON)

文件：171.2 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V Dual N-channel MOSFET

General Description The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. Product Summary VDS 30V

文件：206.5 Kbytes 页数：6 Pages

AOSMD

万国半导体

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08415 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：4852；Package：SOP-8；Dual N-Channel MOSFET

文件：1.0718 Mbytes 页数：4 Pages

KEXIN

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丝印：4852；Package：SOP-8；Dual N-Channel MOSFET

文件：1.783 Mbytes 页数：4 Pages

KEXIN

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丝印：4854；Package：SOP-8；Dual N-Channel MOSFET

文件：1.29021 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel 30 V (D-S) MOSFET

文件：1.048089 Mbytes 页数：9 Pages

VBSEMI

微碧半导体