丝印：4822A；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.62496 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications). AO4822AL is a Green Product or

文件：116.63 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.62409 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822 is Pb-free (meets ROHS & Sony 259 specifications). AO4822L is a Green Product order

文件：110.87 Kbytes 页数：4 Pages

AOSMD

万国半导体