丝印：4822；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.62409 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822 is Pb-free (meets ROHS & Sony 259 specifications). AO4822L is a Green Product order

文件：110.87 Kbytes 页数：4 Pages

AOSMD

万国半导体

RTC Module With 8Kx8 NVSRAM

文件：104.08 Kbytes 页数：16 Pages

TI

德州仪器

OptiMOS Small-Signal-Transistor

文件：100.22 Kbytes 页数：8 Pages

Infineon

英飞凌