丝印：4803A；Package：SOP-8；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -5 A (VGS = -10V) ● RDS(ON)

文件：2.86327 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4803 is Pb-free (meets ROHS & Sony 259 specifications). AO4803L is a Green Product orde

文件：139.12 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -20V ID (at VGS=-4.5

文件：189.38 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V Dual P-Channel MOSFET

文件：313.75 Kbytes 页数：5 Pages

AOSMD

万国半导体