AO4404A

N-Channel Enhancement Mode Field Effect Transistor; VDS(V) = 30V\nID= 8.5A (VGS= 10V)\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 48mΩ(VGS= 2.5V);

General Description\nThe AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404A is Pb-free (meets ROHS & Sony 259 specifications). AO4404AL is a Green Product ordering option. AO4404A and AO4404AL are electrically identical.

AO4404A

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4404AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectionto

AO4404AL

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4404AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectionto

AO4404B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4404BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontoth

AO4404B

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

AO4404B

30VN-ChannelMOSFET