丝印：A9；Package：SOT-23-3；P-Channel Enhancement MOSFET

Features ● VDS (V) = -30V ● ID = -2.6 A (VGS = -10V) ● RDS(ON)

文件：1.39466 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement MOSFET

文件：1.39466 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). AO3409L is a Green Product order

文件：118.89 Kbytes 页数：4 Pages

AOSMD

万国半导体

HIGH EFFICIENCY SYNCHRONOUS BUCK CONVERTER

文件：486.59 Kbytes 页数：11 Pages

DIODES

美台半导体

Ultrahigh-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：31.78 Kbytes 页数：4 Pages

SANYO

三洋