8W/3.7V,超低 EMI,超低噪声,防破音, AB/D 类双模单声道音频功放

ANT8818是一款内置升压，超低EMI，超低噪声，防破音，单声道AB/D类双模音频功放。在锂电池3.7V供电时，驱动3Q负载，可以输出8W功率。ALC防破音功能能够自动检测输出失真，动态调整放大器增益，确保输出的音频信号不会出现较大的失真。\r\n ANT8818还具备AB类工作模式，在带有收音机功能的应用中不带来任何干扰。 • 8W/3.7V 输出功率\r\n• ALC 自动增益控制\r\n• AB/D 类双模式工作\r\n• 超低 EMI\r\n• 超低噪声\r\n• 上、下电 pop-click 噪声抑制\r\n• 0.05%的失真度\r\n• 2.8V~5.0V 单电源电压供电;

AnaTek

安耐科电子

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

文件：150.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：1.64838 Mbytes 页数：4 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

文件：150.54 Kbytes 页数：4 Pages

AOSMD

万国半导体