AOD403

P-Channel30V(D-S)MOSFET

FEATURES •ComplianttoRoHSDirective2002/95/EC

AOD403

-30VP-ChannelMOSFET

Features VDS(V)=-30V RDS(ON)

AOD403

-30VP-ChannelMOSFET

GeneralDescription TheAOD403usesadvancedtrenchtechnologytoprovideexcellent RDS(ON),lowgatechargeandlowgateresistance.Withtheexcellent thermalresistanceoftheTO-252package,thisdeviceiswellsuited forhighcurrentloadapplications. Features VDS(V)=-30V RDS(ON)

AOD403L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD403usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD403isPb-free(meets

AOI403

iscP-ChannelMOSFETTransistor

AOI403

30VP-ChannelMOSFET

AOI403

30VP-ChannelMOSFET

AOU403

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU403usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU403isPb-free(meetsROHS&Sony259specifications).AOU4

AOU403

P-Channel40V(D-S)MOSFET

FEATURES •ComplianttoRoHSDirective2002/95/EC

AOU403

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=115mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D