ALL DIMENSIONS SHOWN ARE FOR REFERENCE ONLY

EU RoHS DIRECTIVE (MOST RECENT RELEASED VERSION)

文件：86.38 Kbytes 页数：1 Pages

L-COM

英飞畅

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Hal

文件：250.07 Kbytes 页数：6 Pages

AOSMD

万国半导体

QMA Right Angle Crimp FOR RG58 /195 Series

ELECTRICAL: IMPEDENCE: 50 OHMS WITHSTAND VOLTAGE: 1000V FREQUENCY RANGE: 0~18 GHz DURABILITY: 100 CYCLE CABLE RETENTION: > 40 POUNDS MISCELLANEOUS COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031. ALL DIMENSIONS ARE FOR REFERENCE ONLY.

文件：37.73 Kbytes 页数：1 Pages

L-COM

英飞畅

QMA Right Angle Crimp FOR RG58 /195 Series

ELECTRICAL: IMPEDENCE: 50 OHMS WITHSTAND VOLTAGE: 1000V FREQUENCY RANGE: 0~18 GHz DURABILITY: 100 CYCLE CABLE RETENTION: > 40 POUNDS MISCELLANEOUS COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031. ALL DIMENSIONS ARE FOR REFERENCE ONLY.

文件：37.73 Kbytes 页数：1 Pages

L-COM

英飞畅