All Components Inside SiP

文件：231.77 Kbytes 页数：3 Pages

ASB

All Components Inside SiP

ASB

Integrated Circuit Dual Preamp

Features: Dual Pre Amplifier for Car or Home Stereo Use. High Voltage Gain: GVO = 100dB (Typ) @ f = 1kHz Excellent Channel Separation and High Ripple Rejection: CH Sep. = 70dB (Typ) R.R = 50dB (Typ) Low Noise: VNI = 1.0µVrms (Typ) at Rg = 2.2kΩ, BW = 15Hz to 30kHz

文件：18.91 Kbytes 页数：2 Pages

NTE

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A) RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5

文件：71.18 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A) RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5

文件：71.18 Kbytes 页数：8 Pages

NEC

瑞萨