This application note describes a demonstration board able to drive

文件：698.24 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode MOSFET

Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：114.75 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：114.75 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：114.75 Kbytes 页数：10 Pages

ANPEC

茂达电子