An alternative solution to Capacitive power

文件：270.59 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

An alternative solution to Capacitive power

ST

意法半导体

N-Channel 20 V (D-S) MOSFET

文件：1.035829 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=25mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=4.5V RDS(ON)=40mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Compute

文件：603.06 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=25mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=4.5V RDS(ON)=40mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Compu

文件：114.98 Kbytes 页数：10 Pages

ANPEC

茂达电子