N-Channel 100-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

文件：491.36 Kbytes 页数：5 Pages

ANALOGPOWER

MOSFET

AnalogPower

美商亚柏

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) =

文件：209.46 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

文件：959.92 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.97 Kbytes 页数：2 Pages

ISC

无锡固电