SPP17N80C3

CoolMOS??PowerTransistor

SPP17N80C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.29Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

SPP17N80C3

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge

SPP17N80C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

SPP17N80C3

CoolMOSPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

SPW17N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

SPW17N80C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO247 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated

SPW17N80C3

CoolMOSTMPowerTransistor

SPW17N80C3

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

SPW17N80C3

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤290mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation