首页 >SPW17N80C3>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SPW17N80C3 | isc N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤290mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPW17N80C3 | CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
SPW17N80C3 | Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO247 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPW17N80C3 | CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPW17N80C3 | CoolMOSTM Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSTM Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤290mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO247 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.29Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤290mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.29Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Idealforhigh-frequencyswitchingandsynchronousre | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOS??PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOS짰PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOS짰PowerTransistorFeaturesnewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
SPW17N80C3
- 功能描述：
MOSFET COOL MOS PWR TRANS 800V 17A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO-247/TO-3P |
352000 |
SPW17N80C3原装正品,特价供应! INFINEON场效应管MOSTO-247 场效应管MOSFETNCOOLMOSTO-247晶体管极性:本公司经销电子元件、ic集成电路、mcu微控制器、pwm控制器、igbt模块、数字信号处理器、运算放大器等,批发,零售,昌和盛利电子诚信经营,专营进口原装现货 |
询价 | ||
INFINEON |
22+ |
TO-247 |
6000 |
进口原装正品现货,价格优势 |
询价 | ||
INFINEON |
23+ |
5000 |
询价 | ||||
INFINEON |
20+ |
TO-247 |
20000 |
原装正品现货 |
询价 | ||
IR |
2020+ |
TO-247 |
22000 |
全新原装正品 现货库存 价格优势 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-247 |
6000 |
原装正品 |
询价 | ||
INFINEON |
21+ |
TO-247 |
6880 |
只做原装,支持实单 |
询价 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-247 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
询价 | ||
INFINEON |
2020+ |
TO247 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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