Super high density cell design for extremely low RDS(ON)

DESCRIPTION AMS3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

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AMS

N-Channel Enhancement Mode Field Effect Transistor

文件：111.94 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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Plastic-Encapsulate Mosfets

FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

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HOTTECH

合科泰

N-Channel enhancement mode field effect transistor

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON)

文件：1.026839 Mbytes 页数：4 Pages

KEXIN

科信电子