Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML

Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML Features • VCEO=200V, IC=0.7A • Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A • The plastic-covered heat sink eliminates the need for an insulator when m

文件：325.81 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor LED Back Light

NPN Epitaxial Planar Silicon Transistor Features • VCEO=200V, IC=0.7A • Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A • The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002

文件：364.16 Kbytes 页数：4 Pages

SANYO

三洋

TRANS NPN 200V 0.7A TO-126ML

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 200V 0.7A TO126ML

ONSEMI

安森美半导体