N-Channel 60-V (D-S) MOSFET

文件：396.78 Kbytes 页数：5 Pages

ANALOGPOWER

MOSFET

AnalogPower

美商亚柏

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：134.83 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V Dual N-Channel MOSFET

文件：237.77 Kbytes 页数：5 Pages

AOSMD

万国半导体

HEXFETPower MOSFET

文件：277.91 Kbytes 页数：12 Pages

IRF