AME920NE说明书PDF资料供应代理美商亚柏-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AME920NE	文件：341.46 Kbytes Page：5 Pages	Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed 文件：341.46 Kbytes 页数：5 Pages	ANALOGPOWER	ANALOGPOWER
AME920NE	文件：300 bytes Page：1 Pages	MOSFET	AnalogPower 美商亚柏	AnalogPower
BLV920	文件：109.98 Kbytes Page：12 Pages	UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain and ea 文件：109.98 Kbytes 页数：12 Pages	PHI PHI	PHI
BU920P	文件：272.06 Kbytes Page：5 Pages	HIGH VOLTAGE POWER DISSIPATION HIGH VOLTAGE POWER DISSIPATION 文件：272.06 Kbytes 页数：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BU920T	文件：272.06 Kbytes Page：5 Pages	HIGH VOLTAGE POWER DISSIPATION HIGH VOLTAGE POWER DISSIPATION 文件：272.06 Kbytes 页数：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多AME920NE供应商更新时间2026-4-14 11:00:00