600mA CMOS LDO

文件：134.19 Kbytes 页数：12 Pages

AME

安茂微电子

600mA CMOS LDO

文件：134.19 Kbytes 页数：12 Pages

AME

安茂微电子

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. St

文件：117.18 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V Common-Drain Dual N-Channel MOSFET

文件：221.93 Kbytes 页数：5 Pages

AOSMD

万国半导体