CEB8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CEP8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CHM8030LANPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT75Ampere FEATURE ​​​​​​​*Smallflatpackage.(D2PAK) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CZ8030

RFAMPLIFIER

CZ8030

RFAMPLIFIER

DEM8030C

8.3x8.3mmMax.square,3.0,4.0,and4.5mmMax.height.

EG8030

SPWMinverterspecificchip

EPF8030G

HighSpeedLANInterfaceModuleforQSI6611/6612

FDB8030L

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •80A,30V.RDS(ON)=0.0035Ω@VGS=10VRDS(ON)=0.0045Ω@VGS=4.5V

FDB8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC