DEM8030C

8.3 x 8.3mm Max. square, 3.0, 4.0, and 4.5mm Max. height.

DEM8030C_16

Ferrite Inductors

EG8030

SPWMinverterspecificchip

EPF8030G

HighSpeedLANInterfaceModuleforQSI6611/6612

FDB8030L

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •80A,30V.RDS(ON)=0.0035Ω@VGS=10VRDS(ON)=0.0045Ω@VGS=4.5V

FDB8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDMC8030

DualN-ChannelPowerTrench짰MOSFET40V,12A,10m廓

FDP8030L

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •80A,30V.RDS(ON)=0.0035Ω@VGS=10VRDS(ON)=0.0045Ω@VGS=4.5V

FDP8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FST8030

80AmpRectifier20to45VoltsSchottkyBarrier

Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability