首页 >AM7204WC WAF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Four-Six-Eight-ChannelEMIFilterwithIntegratedESDProtection | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Four-Six-Eight-ChannelEMIFilterwithIntegratedESDProtection | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
CMOSASYNCHRONOUSFIFO | IDT Integrated Device Technology, Inc. | IDT | ||
First-In/First-OutDual-Portmemory | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSASYNCHRONOUSFIFO | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSASYNCHRONOUSFIFO2048x9,4096x9,8192x9and16384x9 DESCRIPTION: TheIDT7203/7204/7205/7206/7207/7208aredual-portmemorybufferswithinternalpointersthatloadandemptydataonafirst-in/first-outbasis.ThedeviceusesFullandEmptyflagstopreventdataoverflowandunderflowandexpansionlogictoallowforunlimitedexpansioncapability | IDT Integrated Device Technology, Inc. | IDT | ||
-30VP-ChannelEnhancementModeMOSFET GeneralDescription: TheIRF7204isthesingleP-Channellogic enhancementmodepowerfieldeffecttransistorstoprovideexcellentRDS(on),lowgatechargeandlow gateresistance.It’supto-30Voperationvoltageiswell suitedinswitchingmodepowersupply,SMPS,notebookcomputerpowerm | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
PowerMOSFET(Vdss=-20V,Rds(on)=0.060ohm,Id=-5.3A) Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF |
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