丝印：AM6422BSDGHAALV709；Package：FCBGA；AM64x Sitara™ Processors

1 Features Processor cores: • 1× Dual 64-bit Arm® Cortex®-A53 microprocessor subsystem at up to 1.0GHz – Dual-core Cortex-A53 cluster with 256KB L2 shared cache with SECDED ECC – Each A53 Core has 32KB L1 DCache with SECDED ECC and 32KB L1 ICache with Parity protection • Up to 2× Dual-cor

文件：5.17167 Mbytes 页数：265 Pages

TI

德州仪器

丝印：AM6422B；Package：FCBGA；AM64x Sitara™ Processors

1 Features Processor cores: • 1× Dual 64-bit Arm® Cortex®-A53 microprocessor subsystem at up to 1.0 GHz – Dual-core Cortex-A53 cluster with 256KB L2 shared cache with SECDED ECC – Each A53 Core has 32KB L1 DCache with SECDED ECC and 32KB L1 ICache with Parity protection • Up to 2× Dual-co

文件：6.21298 Mbytes 页数：260 Pages

TI

德州仪器

丝印：AM6422B；Package：FCBGA；AM64x Sitara™ Processors

1 Features Processor cores: • 1× Dual 64-bit Arm® Cortex®-A53 microprocessor subsystem at up to 1.0 GHz – Dual-core Cortex-A53 cluster with 256KB L2 shared cache with SECDED ECC – Each A53 Core has 32KB L1 DCache with SECDED ECC and 32KB L1 ICache with Parity protection • Up to 2× Dual-co

文件：6.25469 Mbytes 页数：263 Pages

TI

德州仪器

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6422/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. AO6422 and AO6422L are electrically identical. -RoHS Compliant -AO6422L is Ha

文件：204.09 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V N-Channel MOSFET

文件：226.05 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

文件：1.8276 Mbytes 页数：4 Pages

KEXIN

科信电子