首页 >AM6415>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET100V,23A,56m廓,LogicLevel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BidirectionalThyristorDiodes(SIDAC) Description: TheNTE6415throughNTE6419SIDACdevicesaresiliconbilateralvoltagetriggeredswitcheswithgreaterpowerhandlingcapabilitiesthanstandardDIACs.UponapplicationofavoltageexceedingtheSIDACbreakovervoltagepoint,theSIDACswitchesonthroughanegativeresistancere | NTE NTE Electronics | NTE | ||
MOSFET–Power,N-Channel100V,23A,55m Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=55mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET100V,23A,56mLogicLevel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
20VP-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
20VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-4.5V,ID@-5.2A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
20VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-4.5V,ID@-5.2A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
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