MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：238.28 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =55mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.31 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：238.28 Kbytes 页数：8 Pages

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N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes 页数：6 Pages

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N-Channel Power MOSFET

文件：78.19 Kbytes 页数：6 Pages

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N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes 页数：6 Pages

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N-Channel Power MOSFET

文件：78.19 Kbytes 页数：6 Pages

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N-Channel 100-V (D-S) MOSFET

文件：983.99 Kbytes 页数：8 Pages

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单 N 沟道，功率 MOSFET，100V，23A，55mΩ

Automotive Power MOSFET. 100V, 23A, 55 mΩ, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• Minimize conduction losses\n• High current capability\n• Robust load performance\n• 100% Avalanche tested\n• Voltage overstress safeguard\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliance;

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