30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

文件：652.1 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

文件：652.1 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

VERY LOWDROP ADJUSTABLE REGULATORS

DESCRIPTION The L4920 and L4921 are adjustable voltage regulator swith a very low voltage drop(0.4V typ.at 0.4A Tj = 25°C), low quiescent current and comprehensive on-chip protection. These devices are protected against load dump and field decay transients, polarity reversal and over heating

文件：64.93 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.04 Kbytes 页数：2 Pages

NTE

Dual N-Channel, Logic Level, PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage an

文件：217.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体