丝印：AM4953；-30V Dual P-Channel Enhancement Mode MOSFET

DESCRIPTION The AM4953 is the Dual P-Channel logic enhancement mode power field effect transistors produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：1.21182 Mbytes 页数：6 Pages

AXELITE

亚瑟莱特

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM4953 is available in SOP8 package. FEATURES  VDS = -30V,ID = -

文件：801.2 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

BTL Drive Single-phase Full-wave Fan Motor Driver

文件：459.7 Kbytes 页数：16 Pages

BCDSEMI

新进半导体

BTL Drive Single-phase Full-wave Fan Motor Driver

文件：497.75 Kbytes 页数：16 Pages

DIODES

美台半导体

MOSFET

The AM4953 is the Dual P-Channel logicenhancement mode power field effect transistorsare produced using high cell density, DMOS trenchtechnology.This high density process is especially tailored tominimize on-state resistance.These devices are particularly suited for low voltageapplication, notebook

Axelite

亚瑟莱特

Single Phase 12V BLDC Smart Fan and Motor Driver

The AM4953 is a single-phase BTL output fan motor driver designed by bipolar process. This IC features high efficiency, silent operation and includes lock shutdown and automatic restart functions. When the motor is under lock condition, the lock shutdown function turns off the output current. When t BTL Output Single-phase Full-wave Linear Drive (Gain Resistor=1k to 360kΩ, Gain=51dB)Support Low-voltage Drive and Feature a Wide Usable Voltage Range (2.2V to 16V)Low Saturation Output (High Side and Low Side Saturation Voltage): VSAT_TOTAL=1.2V (typical, IOUT=300mA)Built-in Lock Protection and Aut;

Diodes

美台半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM4953 is available in SOP8 package. FEATURES  VDS = -30V,ID = -

文件：801.2 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM4953 is available in SOP8 package. FEATURES  VDS = -30V,ID = -

文件：801.2 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

-30V Dual P-Channel Enhancement Mode MOSFET

DESCRIPTION The AM4953 is the Dual P-Channel logic enhancement mode power field effect transistors produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：1.21182 Mbytes 页数：6 Pages

AXELITE

亚瑟莱特

-30V Dual P-Channel Enhancement Mode MOSFET

DESCRIPTION The AM4953 is the Dual P-Channel logic enhancement mode power field effect transistors produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：1.21182 Mbytes 页数：6 Pages

AXELITE

亚瑟莱特