1200V, 40A, Irrm=12.3A IGBT MOSFET

DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency

文件：545.87 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

绝缘栅双极 IGBT

AiT-Semi

创瑞科技

绝缘栅双极 IGBT

AiT-Semi

创瑞科技

IGBT - Field Stop, Trench 1200 V, 40 A

文件：524.9 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.5 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGHL40T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor contr

文件：449.43 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Field Stop IGBT

DESCRIPTION · High Current Capability · Low Switching Loss · Positive Temperature Coefficient for Easy Parallel Operation APPLICATIONS ·Boost and Inverter in Solar Applications ·TUPS ·Energy Storage System

文件：420.37 Kbytes 页数：5 Pages

ISC

无锡固电