P-Channel 200-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：263.35 Kbytes 页数：5 Pages

AnalogPower

1200V, 40A, Irrm=12.3A IGBT MOSFET

DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency

文件：545.87 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

650V 40A IGBT MOSFET

DESCRIPTION The AM40T65 is available in TO-3PN package. FEATURE  Fast Switching  Positive temperature coefficient  Fast recovery anti-parallel diode APPLICATION  Welding converters  UPS  Air condition

文件：621.83 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

650V 40A IGBT MOSFET

DESCRIPTION The AM40T65 is available in TO-3PN package. FEATURE  Fast Switching  Positive temperature coefficient  Fast recovery anti-parallel diode APPLICATION  Welding converters  UPS  Air condition

文件：621.83 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

650V 40A IGBT MOSFET

DESCRIPTION The AM40T65 is available in TO-3PN package. FEATURE  Fast Switching  Positive temperature coefficient  Fast recovery anti-parallel diode APPLICATION  Welding converters  UPS  Air condition

文件：621.83 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

UNIVERSAL AMPLIFIER IC

文件：317.26 Kbytes 页数：21 Pages

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亚德诺

Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz

文件：74.63 Kbytes 页数：2 Pages

MA-COM

Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz

文件：207.61 Kbytes 页数：2 Pages

MACOM

Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz

文件：139.9 Kbytes 页数：2 Pages

MACOM

Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz

文件：139.9 Kbytes 页数：2 Pages

MACOM