MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±20V ID(A)= -4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V The AM3407A is available in SOT-23 package. FEATURES ⚫ Available in SOT-23 p ackage APPLICATION ⚫ Portable Equipment ⚫ Power Management ⚫ Load Switch

文件：563.87 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±20V ID(A)= -4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V The AM3407A is available in SOT-23 package. FEATURES ⚫ Available in SOT-23 p ackage APPLICATION ⚫ Portable Equipment ⚫ Power Management ⚫ Load Switch

文件：563.87 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±20V ID(A)= -4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V The AM3407A is available in SOT-23 package. FEATURES ⚫ Available in SOT-23 p ackage APPLICATION ⚫ Portable Equipment ⚫ Power Management ⚫ Load Switch

文件：563.87 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

P-Channel 20-V (D-S) MOSFET

文件：525.02 Kbytes 页数：5 Pages

AnalogPower

Resonant driver for LED SMPS demonstration board

文件：3.28103 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V ID= -4.1 A RDS(ON)

文件：297.24 Kbytes 页数：6 Pages

AOSMD

万国半导体