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型号	下载订购	功能描述	制造商上传企业	LOGO
AM3134	文件：438.68 Kbytes Page：8 Pages	MOSFET 20V N-CHANNEL ENHAANCEMENT MODE DESCRIPTION AM3134 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. AM3 文件：438.68 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM3134	文件：300 bytes Page：1 Pages	低压MOS管	AiT-Semi 创瑞科技	AiT-Semi
AM3134VM3R	文件：438.68 Kbytes Page：8 Pages	MOSFET 20V N-CHANNEL ENHAANCEMENT MODE DESCRIPTION AM3134 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. AM3 文件：438.68 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM3134VM3VR	文件：438.68 Kbytes Page：8 Pages	MOSFET 20V N-CHANNEL ENHAANCEMENT MODE DESCRIPTION AM3134 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. AM3 文件：438.68 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI

更多AM3134供应商更新时间2026-1-19 9:06:00