AM3134VM3VR技术资料参数贸易商创瑞科技-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AM3134VM3VR	文件：438.68 Kbytes Page：8 Pages	MOSFET 20V N-CHANNEL ENHAANCEMENT MODE DESCRIPTION AM3134 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. AM3 文件：438.68 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM3134VM3R	文件：438.68 Kbytes Page：8 Pages	MOSFET 20V N-CHANNEL ENHAANCEMENT MODE DESCRIPTION AM3134 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. AM3 文件：438.68 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM3352BZCZ100	文件：0 bytes Page：0 Pages	TI SMD	TI 德州仪器上传：深圳市明嘉莱科技有限公司	TI
AM3352BZCZ100	文件：0 bytes Page：0 Pages	TI/德州仪器 BGA324	TI/德州仪器上传：深圳市明嘉莱科技有限公司	TI/德州仪器
AM3352BZCZ60	文件：0 bytes Page：0 Pages	TI BGA	TI 德州仪器上传：深圳市华来深电子有限公司	TI

更多AM3134VM3VR供应商更新时间2025-10-10 16:20:00