Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

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KNOWLES

楼氏电子

Axial Molded Inductors

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ALLIED

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

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AnalogPower

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

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POWER-ONE

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

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POWER-ONE

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 30 V V GS 12 V ID(A)= 6.6 A R DS(ON) ON)=45mΩ(Typ.)@V GS 10V R DS(ON) ON)=52mΩ(Typ.)@V GS 4.5V R DS(ON) ON)=68mΩ(Typ.)@V GS 2.5V The AM 3095 is available i n SOT 89 3 p ac kage FEATURES ⚫ Fast switch ⚫ Low gate charge ⚫ High power and current handling capabili

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AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 30 V V GS 12 V ID(A)= 6.6 A R DS(ON) ON)=45mΩ(Typ.)@V GS 10V R DS(ON) ON)=52mΩ(Typ.)@V GS 4.5V R DS(ON) ON)=68mΩ(Typ.)@V GS 2.5V The AM 3095 is available i n SOT 89 3 p ac kage FEATURES ⚫ Fast switch ⚫ Low gate charge ⚫ High power and current handling capabili

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AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 30 V V GS 12 V ID(A)= 6.6 A R DS(ON) ON)=45mΩ(Typ.)@V GS 10V R DS(ON) ON)=52mΩ(Typ.)@V GS 4.5V R DS(ON) ON)=68mΩ(Typ.)@V GS 2.5V The AM 3095 is available i n SOT 89 3 p ac kage FEATURES ⚫ Fast switch ⚫ Low gate charge ⚫ High power and current handling capabili

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AITSEMI

创瑞科技

丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

• FEATURES • Drain Current :ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 50mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • LED backl

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ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such

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AnalogPower