N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：590.07 Kbytes 页数：5 Pages

ANALOGPOWER

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

文件：146.9 Kbytes 页数：4 Pages

POWER-ONE

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

文件：146.9 Kbytes 页数：4 Pages

POWER-ONE

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 30 V V GS 12 V ID(A)= 6.6 A R DS(ON) ON)=45mΩ(Typ.)@V GS 10V R DS(ON) ON)=52mΩ(Typ.)@V GS 4.5V R DS(ON) ON)=68mΩ(Typ.)@V GS 2.5V The AM 3095 is available i n SOT 89 3 p ac kage FEATURES ⚫ Fast switch ⚫ Low gate charge ⚫ High power and current handling capabili

文件：515.22 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 30 V V GS 12 V ID(A)= 6.6 A R DS(ON) ON)=45mΩ(Typ.)@V GS 10V R DS(ON) ON)=52mΩ(Typ.)@V GS 4.5V R DS(ON) ON)=68mΩ(Typ.)@V GS 2.5V The AM 3095 is available i n SOT 89 3 p ac kage FEATURES ⚫ Fast switch ⚫ Low gate charge ⚫ High power and current handling capabili

文件：515.22 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 30 V V GS 12 V ID(A)= 6.6 A R DS(ON) ON)=45mΩ(Typ.)@V GS 10V R DS(ON) ON)=52mΩ(Typ.)@V GS 4.5V R DS(ON) ON)=68mΩ(Typ.)@V GS 2.5V The AM 3095 is available i n SOT 89 3 p ac kage FEATURES ⚫ Fast switch ⚫ Low gate charge ⚫ High power and current handling capabili

文件：515.22 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

丝印：AM3351BZCE30；Package：NFBGA；AM335x Sitara™ Processors

1.1 Features 1 • Up to 1-GHz Sitara™ ARM® Cortex®-A8 32‑Bit RISC Processor – NEON™ SIMD Coprocessor – 32KB of L1 Instruction and 32KB of Data Cache With Single-Error Detection (Parity) – 256KB of L2 Cache With Error Correcting Code (ECC) – 176KB of On-Chip Boot ROM – 64KB of Dedicated RAM

文件：3.66231 Mbytes 页数：256 Pages

TI

德州仪器

丝印：AM3351BZCE30；Package：NFBGA；AM335x Sitara™ Processors

1.1 Features 1 • Up to 1-GHz Sitara™ ARM® Cortex®-A8 32‑Bit RISC Processor – NEON™ SIMD Coprocessor – 32KB of L1 Instruction and 32KB of Data Cache With Single-Error Detection (Parity) – 256KB of L2 Cache With Error Correcting Code (ECC) – 176KB of On-Chip Boot ROM – 64KB of Dedicated RAM

文件：3.66231 Mbytes 页数：256 Pages

TI

德州仪器

丝印：AM3351BZCE60；Package：NFBGA；AM335x Sitara™ Processors

1.1 Features 1 • Up to 1-GHz Sitara™ ARM® Cortex®-A8 32‑Bit RISC Processor – NEON™ SIMD Coprocessor – 32KB of L1 Instruction and 32KB of Data Cache With Single-Error Detection (Parity) – 256KB of L2 Cache With Error Correcting Code (ECC) – 176KB of On-Chip Boot ROM – 64KB of Dedicated RAM

文件：3.66231 Mbytes 页数：256 Pages

TI

德州仪器

丝印：AM3351BZCE60；Package：NFBGA；AM335x Sitara™ Processors

1.1 Features 1 • Up to 1-GHz Sitara™ ARM® Cortex®-A8 32‑Bit RISC Processor – NEON™ SIMD Coprocessor – 32KB of L1 Instruction and 32KB of Data Cache With Single-Error Detection (Parity) – 256KB of L2 Cache With Error Correcting Code (ECC) – 176KB of On-Chip Boot ROM – 64KB of Dedicated RAM

文件：3.66231 Mbytes 页数：256 Pages

TI

德州仪器