MOSFET 650V, 20A N-CHANNEL

FEATURE •Proprietary New Planar Technology •R DS(ON),typ. typ.=0.38 Ω@V GS =10V •Low Gate Charge Minimize Switching Loss •Fast Recovery Body Diode DESCRIPTION The AM20N65 is available in TO 220 and TO220F Packages. APPLICATIONS •Adaptor •TV Main Power •SMPS Power Supply •LCD Panel

文件：1.47166 Mbytes 页数：11 Pages

AITSEMI

创瑞科技

N-Channel 650-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：453.04 Kbytes 页数：5 Pages

ANALOGPOWER

MOSFET

AnalogPower

美商亚柏

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：659.3 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：529.61 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. Drive circuits can be simple.

文件：400.95 Kbytes 页数：5 Pages

CET-MOS

华瑞