N-Channel 200-V (D-S) MOSFET

文件：79.94 Kbytes 页数：3 Pages

ANALOGPOWER

N-Channel MOSFET uses advanced trench technology

文件：1.89648 Mbytes 页数：5 Pages

DOINGTER

杜因特

MOSFET

AnalogPower

美商亚柏

TMOS POWER FET 20 AMPERES 200 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high

文件：258.709 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：203.09 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：203.09 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉