AM1011-300

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-300isarugged,ClassCcommonbasedevicespecificallydesignedfornewModeSinterrogatorandtransponderapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTING ■LOWRFTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■METAL/CERAMIC

AM1011-400

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1011-400deviceisahighpowerClassCtransistorspecificallydesignedforTCASandMode-Spulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■15:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGE

AM1011-500

NPN RF POWER TRANSISTOR

DESCRIPTION: TheASIAM1011-500isaCommonBaseDeviceDesignedforPulsedL-BandRadarAmplifierApplications. FEATURESINCLUDE: •Input/OutputMatching •GoldMetallization •HermeticMetal/CeramicPackage

AM1011-500

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-500deviceisahighpowerClassCtransistorspecificallydesignedforL-BandAvionicapplicationsinvolvinghighpulseburstdutycycles. ■POUT=500WMIN.WITH8.5dBMIN.GAIN ■10:1LOADVSWRCAPABILITY@10µS.,1DUTY ■SIXPAC™HERMETICMETAL/CERAMICPACKAGE ■E

AM1012

MOSFET N-CHANNEL 1.8-V (G-S) MOSFET

FEATURES TrenchFETPowerMOSFET:1.8-VRated Gate-SourceESDProtected:2000V High-SideSwitching LowOn-Resistance:0.7Ω LowThreshold:0.8V(typ) FastSwitchingSpeed:10ns AvailableinSC-89Package DESCRIPTIONFEATURES TheAM1012isavailableinSC-89Package APPLICATION Drive

AM1013

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=20V VGS=6V ID(A)=350mA RDS(ON)=0.8Ω@VGS=-4.5V RDS(ON)=1.2Ω@VGS=-2.5V RDS(ON)=1.8Ω@VGS=-1.8V TheAM 1013isavailableinSC-89package FEATURES Gate-SourceESDProtected:2kV High-SideSwitching LowOn-Resistance:1.2Ω LowThreshold:0.8V(typ) 

AM1013CK3R

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=20V VGS=6V ID(A)=350mA RDS(ON)=0.8Ω@VGS=-4.5V RDS(ON)=1.2Ω@VGS=-2.5V RDS(ON)=1.8Ω@VGS=-1.8V TheAM 1013isavailableinSC-89package FEATURES Gate-SourceESDProtected:2kV High-SideSwitching LowOn-Resistance:1.2Ω LowThreshold:0.8V(typ) 

AM1013CK3VR

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=20V VGS=6V ID(A)=350mA RDS(ON)=0.8Ω@VGS=-4.5V RDS(ON)=1.2Ω@VGS=-2.5V RDS(ON)=1.8Ω@VGS=-1.8V TheAM 1013isavailableinSC-89package FEATURES Gate-SourceESDProtected:2kV High-SideSwitching LowOn-Resistance:1.2Ω LowThreshold:0.8V(typ) 

AM1016A

One Channel H-Bridge Motor Driver

FeaturesandBenefits WideSupplyVoltageRange(2.0V~6.8V) 0.9AContinuousCurrent,2APeakCurrent LowStandbyModeCurrent(Typ=0.01μA) LowQuiescentOperationCurrent LowMOSFETsOn-resistance0.6Ω@Io=0.2A; 0.65Ω@Io=0.6A ProvideFourOperationModes: Forward/Reverse/Stop

AM101-G

Silicon Miniature Single-Phase Bridge

Features: •Ratingsto1000VPRV •Surgeoverloadrating-30/50amperespeak •Idealforprintedcircuitedboard •Reliableconstructionutilizingmoldedplastic •Mountingposition:Any