RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

DESCRIPTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY G

文件：43.62 Kbytes 页数：4 Pages

STMICROELECTRONICS

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L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTP

文件：64.37 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. FEATURES: • Internal Input/Output Matching Networks • PG = 9.2 dB min. at 75 W/1090 MHz • Omnigold™ Metalization System

文件：83.9 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-300 is a rugged, Class C common base device specifically designed for new ModeS interrogator and transponder applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTING ■ LOW RF THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC

文件：59.29 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 15:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GE

文件：92.25 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. ■ POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN ■ 10:1 LOAD VSWR CAPABILITY @ 10µS., 1 DUTY ■ SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE ■ E

文件：54.32 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed L-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Hermetic Metal/Ceramic Package

文件：41.09 Kbytes 页数：1 Pages

ASI

MOSFET N-CHANNEL 1.8-V (G-S) MOSFET

FEATURES TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V High-Side Switching Low On-Resistance: 0.7Ω Low Threshold: 0.8V (typ) Fast Switching Speed: 10ns Available in SC-89 Package DESCRIPTION FEATURES The AM1012 is available in SC-89 Package APPLICATION  Drive

文件：600.81 Kbytes 页数：9 Pages

AITSEMI

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MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

文件：679.34 Kbytes 页数：8 Pages

AITSEMI

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MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

文件：679.34 Kbytes 页数：8 Pages

AITSEMI

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