MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

文件：679.34 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

SC SERIES MOSFET

AiT-Semi

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MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

文件：679.34 Kbytes 页数：8 Pages

AITSEMI

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MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS= 20V VGS= 6V ID(A)= 350mA RDS(ON) =0.8Ω@VGS = -4.5V RDS(ON) =1.2Ω@VGS = -2.5V RDS(ON) =1.8Ω@VGS = -1.8V The AM 1013 is available in SC-89 p ackage FEATURES  Gate-Source ESD Protected: 2kV  High-Side Switching  Low On-Resistance: 1.2Ω  Low Threshold: 0.8V (typ) 

文件：679.34 Kbytes 页数：8 Pages

AITSEMI

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1013 MHz Ceramic Bandpass Filter

Anatech(AEI)