Intel Atom Processor E3900 Series 3.5 SBC

文件：939.85 Kbytes 页数：2 Pages

DFI

友通资讯

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ)

文件：35.52 Kbytes 页数：4 Pages

SIEMENS

西门子

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag

文件：94.19 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Schottky Barrier Diode

Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

文件：17.07 Kbytes 页数：1 Pages

NTE