INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ

文件：240.25 Kbytes 页数：4 Pages

MKS

NPN Epitaxial Planar Silicon Transistor LED Back Light

NPN Epitaxial Planar Silicon Transistor Features • VCEO=200V, IC=0.7A • Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A • The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002

文件：364.16 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML

Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML Features • VCEO=200V, IC=0.7A • Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A • The plastic-covered heat sink eliminates the need for an insulator when m

文件：325.81 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Using the Demoboard for the TD350 Advanced IGBT Driver

文件：919.12 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体