AOD410

N-ChannelEnhancementModeFieldEffectTransistor

AOD410

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD410usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.AOD410L(GreenProduct)isofferedinalead-freepackage. Features VDS(V)=30V ID=8A RDS(

AOD410

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

AOD410

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOD410L

N-ChannelEnhancementModeFieldEffectTransistor

AOFW410-B

HoneywellZephyrTMDigitalAirflowSensors

AOFW410-G

HoneywellZephyrTMDigitalAirflowSensors

AOFW410-R

HoneywellZephyrTMDigitalAirflowSensors

AOFW410-S

HoneywellZephyrTMDigitalAirflowSensors

AOFW410-W

HoneywellZephyrTMDigitalAirflowSensors