AK7600VF Evaluation Board Rev.1

文件：2.70717 Mbytes 页数：45 Pages

AKM

旭化成微电子

AK7600VF Evaluation Board Rev.1

AKM

旭化成微电子

Complementary Enhancement Mode Field Effect Transistor

文件：139.83 Kbytes 页数：7 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

N- and P- Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices

文件：1.96125 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. AO7600 and

文件：145.9 Kbytes 页数：7 Pages

AOSMD

万国半导体