Automotive IGBT discretes

World-class low-cost power for fast-switching applications in small SMD packages • TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in\n• 650V break-down voltage, 30A nominal current\n• Co-packed with RAPID-1 fast and soft anti-parallel diode\n• Very fast switching (up to 150kHz)\n• Automotive;

Infineon

英飞凌

丝印：AK30EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：1.56773 Mbytes 页数：16 Pages

Infineon

英飞凌

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：DISCRETE SWITCHES

Infineon

英飞凌

INFINEON
TO247

Infineon

英飞凌

上传：深圳市杰顺创科技有限公司

AIR
GPRS

AIR

上传：深圳市得捷芯城科技有限公司