丝印：AIK；Package：DO-219；SURFACE MOUNT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

FEATURES • For surface mounted applications • Reliable low cost construction utilizing molded plastic technique • Plastic material has UL flammability classification 94V-O • Typical IR less than 1uA above 10V • Fast response time: typically less than 1.0ns for Uni-direction. • RoHS complian

文件：517.169 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：AIK；Package：MSOP-10；HIGH-EFFICIENCY STEP-DOWN LOW POWER DC-DC CONVERTER

文件：471.62 Kbytes 页数：25 Pages

TI

德州仪器

丝印：AIK；Package：MSOP-10；TPS6200x High-Efficiency Step-Down Low Power DC-DC Converter

文件：1.29791 Mbytes 页数：31 Pages

TI

德州仪器

丝印：AK15EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode • Maximum junction temperature 175°C • Dynamically stre

文件：1.57983 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AK15EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：1.57395 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AK30EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode • Maximum junction temperature 175°C • Dynamically stre

文件：1.60856 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AK30EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：1.56773 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AK40EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode • Maximum junction temperature 175°C • Dynamically stre

文件：1.56448 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AK40EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：1.57713 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AK50EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode • Maximum junction temperature 175°C • Dynamically stre

文件：1.57843 Mbytes 页数：16 Pages

Infineon

英飞凌