丝印：AHCT32；Package：WQFN；SNx4AHCT32 Quadruple 2-Input Positive-OR Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model – 200-V Machine Model • On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other produc

文件：3.54736 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AHCT32；Package：SOIC；SNx4AHCT32 Quadruple 2-Input Positive-OR Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model – 200-V Machine Model • On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other produc

文件：3.54736 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AHCT32；Package：SOIC；SNx4AHCT32 Quadruple 2-Input Positive-OR Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model – 200-V Machine Model • On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other produc

文件：3.54736 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AHCT32；Package：SO；SNx4AHCT32 Quadruple 2-Input Positive-OR Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model – 200-V Machine Model • On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other produc

文件：3.54736 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AHCT32MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-OR GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：199.87 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT32MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-OR GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：199.87 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT32Q；Package：SOIC；SN74AHCT32-Q1 Automotive Quadruple 2-Input Positive-OR Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • Low power consu

文件：1.53952 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AHCT32Q；Package：SOIC；SN74AHCT32-Q1 Automotive Quadruple 2-Input Positive-OR Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • Low power consu

文件：1.53952 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AHCT32Q；Package：TSSOP；SN74AHCT32-Q1 Automotive Quadruple 2-Input Positive-OR Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • Low power consu

文件：1.53952 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AHCT32Q；Package：TSSOP；SN74AHCT32-Q1 Automotive Quadruple 2-Input Positive-OR Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • Low power consu

文件：1.53952 Mbytes 页数：26 Pages

TI

德州仪器