丝印：AHCT00；Package：WQFN；SNx4AHCT00 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED

文件：2.91341 Mbytes 页数：40 Pages

TI

德州仪器

丝印：AHCT00；Package：SOIC；SNx4AHCT00 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED

文件：2.91341 Mbytes 页数：40 Pages

TI

德州仪器

丝印：AHCT00；Package：SOIC；SNx4AHCT00 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED

文件：2.91341 Mbytes 页数：40 Pages

TI

德州仪器

丝印：AHCT00；Package：SOIC；SNx4AHCT00 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED

文件：2.91341 Mbytes 页数：40 Pages

TI

德州仪器

丝印：AHCT00；Package：SO；SNx4AHCT00 Quadruple 2-Input Positive-NAND Gates

1 Features • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED

文件：2.91341 Mbytes 页数：40 Pages

TI

德州仪器

丝印：AHCT00MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATES

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Inputs Are TTL-Voltage Compatible Latch-Up Performan

文件：199.04 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT00MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATES

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Inputs Are TTL-Voltage Compatible Latch-Up Performan

文件：199.04 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT00Q；SN74AHCT00Q-Q1 Automotive Quadruple 2-Input Positive-NAND Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • Low power consu

文件：1.48419 Mbytes 页数：25 Pages

TI

德州仪器

丝印：AHCT00Q；SN74AHCT00Q-Q1 Automotive Quadruple 2-Input Positive-NAND Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • Low power consu

文件：1.48419 Mbytes 页数：25 Pages

TI

德州仪器

丝印：AHCT00MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATES

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Inputs Are TTL-Voltage Compatible Latch-Up Performan

文件：199.04 Kbytes 页数：9 Pages

TI

德州仪器