125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

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125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

文件：382.47 Kbytes 页数：6 Pages

TRIQUINT

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB powe

文件：382.47 Kbytes 页数：6 Pages

TRIQUINT

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Qorvo

威讯联合

射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8-1.88GHz 125Watt Gain 13.5dB

ASI Semiconductor