90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

文件：356.18 Kbytes 页数：9 Pages

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90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

文件：356.18 Kbytes 页数：9 Pages

TRIQUINT

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This

文件：356.18 Kbytes 页数：9 Pages

TRIQUINT

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Qorvo

威讯联合

射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8-1.88GHz 90Watt Gain 14dB

ASI Semiconductor